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论文类型：会议论文

发表时间：2016-10-20

收录刊物：EI、CPCI-S、Scopus

页面范围：362-367

关键字：IGBT; active gate drive; switching losses; current overshoot

摘要：This paper investigates the IGBT's switching characteristics and its gate drive with state-of-the-art control strategies. During the switching transients, the turn-on and turn-off delay time, current/voltage overshoot, switching losses dissipated in IGBT and electromagnetic interference are all related to its driving circuit. Hence, an advanced and appropriate driving strategy can further improve the performance and reliability of the power electronics systems, and exerts the full potential of the power semiconductor device. A comparative study of typical active gate drive methods has been conducted and switch dynamics and stress factors are evaluated by analytical expressions and simulations. Their pros and cons have been discussed.