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论文类型：会议论文

发表时间：2017-01-01

收录刊物：EI、CPCI-S、Scopus

页面范围：1771-1776

关键字：IGBT; gate drive; switching; optimization; reliability

摘要：This paper investigates the advanced IGBT gate driving strategies which optimizes its switching behaviours and compares with the conventional driving method. The optimal IGBT performance not only relies on its advanced semiconductor design and fabrication techniques, but also the optimized local control and protection from intelligent gate drivers and global converter control strategy. An advanced and appropriate driving strategy can further improve the performance and reliability of the power electronics systems, and exerts the full potential of the power semiconductor device. A comparative study of typical active gate drive methods and the effects of varying gate driving parameters has been conducted and examined and their pros and cons have been discussed.