点击次数：

论文类型： 会议论文

发表时间： 2010-06-26

收录刊物： EI、CPCI-S、Scopus

卷号： 675-677

页面范围： 113-+

关键字： heating treatment; resistivity; polycrystalline silicon

摘要： Effect of heat treatment in atmosphere on the resistivity of polycrystalline silicon has been investigated in this paper. After heat treatment at 1050 degrees C for 10h, there is no obvious change of the resistivity in the N-type region of polycrystalline silicon, which could be contributed to the complicated influence factors, such as more impurities content and defects. On the other hand, an obvious increase of the resistivity was observed in the P-type region which could be contributed the redistribution of Al and B in the Si-SiO2 interface. The resistivity of the P-type region increased from less than 1 Omega.cm to several hundreds Omega.cm.