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Piezo-Phototronic Effect on Selective Electron or Hole Transport through Depletion Region of Vis-NIR Broadband Photodiode

发表时间:2019-03-12
点击次数:
论文类型:
期刊论文
第一作者:
Zou, Haiyang
通讯作者:
Wang, ZL (reprint author), Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA.; Wang, ZL (reprint author), Chinese Acad Sci, Beijing Inst Nanoenergy & Nanosyst, Beijing 100083, Peoples R China.
合写作者:
Zi, Yunlong,Wang, Zhong Lin,Li, Xiaogan,Peng, Wenbo,Wu, Wenzhuo,Yu, Ruomeng,Wu, Changsheng,Ding, Wenbo,Hu, Fei,Liu, Ruiyuan
发表时间:
2017-08-04
发表刊物:
ADVANCED MATERIALS
收录刊物:
SCIE、EI、Scopus
文献类型:
J
卷号:
29
期号:
29
ISSN号:
0935-9648
关键字:
broadband photodetectors; piezo-phototronic effect; p-Si/n-ZnO; visible/near-infrared; ZnO nanowire arrays
摘要:
Silicon underpins nearly all microelectronics today and will continue to do so for some decades to come. However, for silicon photonics, the indirect band gap of silicon and lack of adjustability severely limit its use in applications such as broadband photodiodes. Here, a high-performance p-Si/n-ZnO broadband photodiode working in a wide wavelength range from visible to near-infrared light with high sensitivity, fast response, and good stability is reported. The absorption of near-infrared wavelength light is significantly enhanced due to the nanostructured/textured top surface. The general performance of the broadband photodiodes can be further improved by the piezophototronic effect. The enhancement of responsivity can reach a maximum of 78% to 442 nm illumination, the linearity and saturation limit to 1060 nm light are also significantly increased by applying external strains. The photodiode is illuminated with different wavelength lights to selectively choose the photogenerated charge carriers (either electrons or holes) passing through the depletion region, to investigate the piezo-phototronic effect on electron or hole transport separately for the first time. This is essential for studying the basic principles in order to develop a full understanding about piezotronics and it also enables the development of the better performance of optoelectronics.
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