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发布时间：2019-03-09
论文类型：期刊论文
发表时间：2011-06-29
发表刊物：PHYSICAL REVIEW LETTERS
收录刊物：EI、SCIE、Scopus
卷号：107
期号：1
ISSN号：0031-9007
摘要：First-principles molecular dynamics simulation reveals the effects of electronic excitation in the amorphization of Ge-Sb-Te. The excitation makes the phase change an element-selective process, lowers the critical amorphization temperature considerably, for example, to below 700 K at a 9% excitation, and reduces the atomic diffusion coefficient with respect to that of melt by at least 1 order of magnitude. Noticeably, the resulting structure has fewer wrong bonds and significantly increased phase-change reversibility. Our results point to a new direction in manipulating ultrafast phase-change processes with improved controllability.