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论文类型：期刊论文

发表时间：2018-01-01

发表刊物：RSC ADVANCES

收录刊物：SCIE、EI

卷号：8

期号：12

页面范围：6341-6345

ISSN号：2046-2069

摘要：A Schottky barrier diode (SBD) solar-blind photodetector was fabricated based on the single crystal beta-Ga2O3. Cu and Ti/Au were deposited on the top and bottom surface of Ga2O3 as Schottky and ohmic contacts, respectively. The SBD exhibits a higher rectification ratio of up to 5 x 10(7) at +/- 2 V. The photoresponse spectra show a maximum responsivity at 241 nm and a cutoff wavelength of 256 nm. The solar-blind/ultraviolet and solar-blind/visible rejection ratio can reach a high level of up to 200 and 1000, respectively. It is interesting that the device has a clear response to the solar-blind wavelength at zero bias, which confirms it can be used as a self-powered solar-blind photodetector.