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论文类型：期刊论文

发表时间：2016-10-01

发表刊物：CHEMICAL PHYSICS LETTERS

收录刊物：SCIE、EI、Scopus

卷号：662

页面范围：176-181

ISSN号：0009-2614

关键字：Perovskite; Electroluminescence; Two-step spin-coating; Near-infrared

摘要：The perovskite light-emitting diodes (Pe-LEDs) with the structure of Ag/Spiro-OMeTAD/CH3NH3PbI3/ TiO2/FTO were synthesized, where the CH3NH3PbI3 perovskite layer was deposited by a two-step spin coating process. A dominant near-infrared electroluminescence (EL) at 773 nm was detected from the Pe-LEDs under forward bias at room temperature. The origin and mechanism of the EL were discussed in comparison with the photoluminescence (PL) spectra, and it was attributed to the radiative recombination of electrons and holes confined in the CH3NH3PbI3 emissive layer. Moreover, the corresponding energy band diagrams was proposed to illustrate the carrier transport mechanism in the Pe-LED device. (C) 2016 Elsevier B.V. All rights reserved.