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论文类型：期刊论文

发表时间：2016-03-01

发表刊物：JAPANESE JOURNAL OF APPLIED PHYSICS

收录刊物：SCIE、EI、Scopus

卷号：55

期号：3

ISSN号：0021-4922

摘要：Vertically conducting deep-ultraviolet (DUV) light-emitting diodes (LEDs) with a polarization-induced backward-tunneling junction (PIBTJ) were grown by metal-organic chemical vapor deposition (MOCVD) on 6H-SiC substrates. A self-consistent solution of Poisson-Schrodinger equations combined with polarization-induced theory was applied to simulate the PIBTJ structure, energy band diagrams, and free-carrier concentration distribution. AlN and graded AlxGa1-xN interlayers were introduced between the PIBTJ and multiple quantum well layers to avoid cracking of the n-Al0.5Ga0.5N top layer. At a driving current of 20 mA, an intense DUV emission at similar to 288nm and a weak shoulder at similar to 386nm were observed from the AlGaN top layer side. This demonstrates that the PIBTJ can be used to fabricate vertically conducting DUV LED on SiC substrates. (C) 2016 The Japan Society of Applied Physics