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论文类型：期刊论文

发表时间：2014-01-27

发表刊物：APPLIED PHYSICS LETTERS

收录刊物：SCIE、EI、Scopus

卷号：104

期号：4

ISSN号：0003-6951

摘要：We demonstrate a simple low-cost approach as an alternative to conventional O-2 plasma treatment to modify the surface of indium tin oxide (ITO) anodes for use in organic light-emitting diodes. ITO is functionalized with F- ions by electrochemical treatment in dilute hydrofluoric acid. An electrode with a work function of 5.2 eV is achieved following fluorination. Using this electrode, a maximum external quantum efficiency of 26.0% (91 cd/A, 102 lm/W) is obtained, which is 12% higher than that of a device using the O-2 plasma-treated ITO. Fluorination also increases the transparency in the near-infrared region. (C) 2014 AIP Publishing LLC.