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个人信息Personal Information
工程师
性别：男
毕业院校：大连理工大学
学位：博士
所在单位：集成电路学院
学科：微电子学与固体电子学
办公地点：开发区校区教学楼C区505
联系方式：0411-62273207
电子邮箱：ymluo@dlut.edu.cn
Rediscovery of the Role of the i-Layer in n-ZnO/SiO2/p-GaN Through Observations from Both the ZnO and GaN Sides
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论文类型：期刊论文
发表时间：2012-12-01
发表刊物：JOURNAL OF ELECTRONIC MATERIALS
收录刊物：Scopus、SCIE、EI
卷号：41
期号：12
页面范围：3453-3456
ISSN号：0361-5235
关键字：Oxides; semiconductors; MOCVD; electroluminescence
摘要：Ultraviolet (UV)-emitting n-ZnO/SiO2/p-GaN devices were fabricated by metalorganic chemical vapor deposition. Electroluminescence spectra of the devices were measured from both the n-ZnO and p-GaN sides. It was found that a narrow emission peak centered at similar to 391.3 nm was observed from the front side, while three peaks (372 nm, 380 nm, and 390 nm) emerged in the case of testing from the GaN side. To interpret this notable difference, a theoretical mechanism is proposed based on carrier accumulation and injection under forward bias voltage.