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个人信息Personal Information
工程师
性别：男
毕业院校：大连理工大学
学位：博士
所在单位：集成电路学院
学科：微电子学与固体电子学
办公地点：开发区校区教学楼C区505
联系方式：0411-62273207
电子邮箱：ymluo@dlut.edu.cn
Room temperature electroluminescence from the ZnO homojunction grown on an n(+)-Si substrate by metal-organic chemical vapor deposition
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论文类型：期刊论文
发表时间：2008-02-01
发表刊物：SEMICONDUCTOR SCIENCE AND TECHNOLOGY
收录刊物：SCIE、EI
卷号：23
期号：2
ISSN号：0268-1242
摘要：ZnO film was grown on a heavily phosphor-doped n(+)-Si substrate by metal-organic chemical vapor deposition technology. X-ray photoelectron spectroscopy measurements indicate that a two-layer structure, comprised of a phosphor-doped ZnO layer and an un-doped ZnO layer, was formed during the diffusion process of phosphor from the n(+)-Si substrate. The current-voltage characteristic exhibited significant rectifying behavior with low-leakage current for this device. The distinct defect-related blue-white electroluminescence was observed, the origin of which was confirmed to be from the ZnO p-n homojunction.