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论文类型：期刊论文

发表时间：2010-03-04

发表刊物：VACUUM

收录刊物：SCIE、EI

卷号：84

期号：7

页面范围：930-934

ISSN号：0042-207X

关键字：Diamond film; Boron doping; HFCVD; SEM; XPS

摘要：Highly boron-doped diamond films were deposited on silicon substrate by hot filament chemical vapor deposition in a gas mixture of hydrogen and methane. The chemical bonding states, surface texture, and electrical resistivity of these films were analyzed by X-ray photoelectron spectroscopy, scan, electron microscope, and four-point probe method. It was found that boron dopants play an important role in the texture and chemical bonding states of the diamond films. An appropriate concentration of boron dopants (B/C ratio of 10 000 ppm) can simultaneously improve crystal quality and reduce resistivity of the diamond films. The minimum resistivity of diamond films reaches 1.12 x 10(-2) Omega cm, which is applicable as electrodes. (C) 2010 Elsevier Ltd. All rights reserved.