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个人信息Personal Information
教授
硕士生导师
任职 : 三束实验室常务副主任
性别：男
毕业院校：大连理工大学
学位：博士
所在单位：物理学院
学科：等离子体物理. 物理化学
办公地点：新三束实验室4号楼406
联系方式：办公电话 84709795-18
电子邮箱：zhangjl@dlut.edu.cn
Sub-band transport mechanism and switching properties for resistive switching nonvolatile memories with structure of silver/aluminum oxide/p-type silicon
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论文类型：期刊论文
发表时间：2015-02-09
发表刊物：APPLIED PHYSICS LETTERS
收录刊物：SCIE、EI、Scopus
卷号：106
期号：6
ISSN号：0003-6951
摘要：In this paper, we discuss a model of sub-band in resistive switching nonvolatile memories with a structure of silver/aluminum oxide/p-type silicon (Ag/AlxOy/p-Si), in which the sub-band is formed by overlapping of wave functions of electron-occupied oxygen vacancies in AlxOy layer deposited by atomic layer deposition technology. The switching processes exhibit the characteristics of the bipolarity, discreteness, and no need of forming process, all of which are discussed deeply based on the model of sub-band. The relationships between the SET voltages and distribution of trap levels are analyzed qualitatively. The semiconductor-like behaviors of ON-state resistance affirm the sub-band transport mechanism instead of the metal filament mechanism. (C) 2015 AIP Publishing LLC.