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论文类型：期刊论文

发表时间：2021-03-05

发表刊物：CHEMISTRYSELECT

卷号：5

期号：46

页面范围：14788-14791

ISSN号：2365-6549

关键字：Crystal engineering; Crystal growth; Perovskite; Single-crystalline thin film; Wet etching

摘要：Organic-inorganic hybrid halide perovskite-single-crystalline thin films with high quality are promising for making high-performance optoelectronic devices, but their fabrication is still challenging, particularly for the top-down fabrication. Here, a facile centrifugal-force-assisted wet-etching strategy is used in fabricating hybrid perovskite-single-crystalline thin film from its single-crystalline wafer. The film thickness can be reduced to less than 20 micrometres and the film remains high quality and flat surface. Besides, this method can be used to regenerate surface-metamorphic perovskite single crystals. The present technique may provide an effective strategy for single-crystalline thin film preparation for demanding device applications and it is expected that this strategy would promise high-efficient utilization of perovskite single crystals.