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论文类型： 会议论文

发表时间： 2011-01-23

收录刊物： EI、Scopus

卷号： 7940

摘要： A diode with Sb-doped p-type ZnO, MgZnO/ZnO/MgZnO double heterojunction, and undoped n-type ZnO layers was grown on c-plane sapphire substrate by plasma-assisted molecular-beam epitaxy. Hall effect measurement showed that the top p-type Sb-doped ZnO layer has a hole concentration of 1  1017cm-3. Mesa geometry light emitting diodes were fabricated with Au/Ni and Au/Ti Ohmic contacts on top of the p-type and n-type layers, respectively. Strong ultraviolet emission was achieved, which yielded an output power of 457 nW at 140 mA. The drastic enhancement of the output power is attributed to carrier confinement in the good-quality intrinsic layer of the double heterojunction. The spatial distribution of light emission was characterized. ? 2011 Copyright Society of Photo-Optical Instrumentation Engineers (SPIE).