点击次数：

论文类型： 期刊论文

发表时间： 2015-08-01

发表刊物： CHINESE PHYSICS B

收录刊物： SCIE、EI、ISTIC、Scopus

卷号： 24

期号： 8

ISSN号： 1674-1056

关键字： silicene; growth mechanism; electronic properties; substrate effect

摘要： Silicene, a monolayer of silicon atoms arranged in a honeycomb lattice, has been undergoing rapid development in recent years due to its superior electronic properties and its compatibility with mature silicon-based semiconductor technology. The successful synthesis of silicene on several substrates provides a solid foundation for the use of silicene in future microelectronic devices. In this review, we discuss the growth mechanism of silicene on an Ag (111) surface, which is crucial for achieving high quality silicene. Several critical issues related to the electronic properties of silicene are also summarized, including the point defect effect, substrate effect, intercalation of alkali metal, and alloying with transition metals.