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论文类型： 期刊论文

发表时间： 2015-07-01

发表刊物： SURFACE ENGINEERING

收录刊物： SCIE、EI、Scopus

卷号： 31

期号： 7

页面范围： 534-539

ISSN号： 0267-0844

关键字： GaN films; ITO substrates; N-2 flux; Low temperature deposition; ECR-PEMOCVD

摘要： GaN films have been fabricated on tin doped indium oxide (ITO) coated glass substrates by electron cyclotron resonance plasma enhanced metal organic chemical vapour deposition. Trimethyl gallium (TMGa) and N-2 were acted as precursors of Ga and N respectively. A GaN buffer layer was introduced to reduce the internal stress between the substrate and the GaN films. Then, the deposition process was performed in N-2 rich atmosphere at a constant substrate temperature as low as 460 degrees C. The TMGa flowrate was fixed at 1.5 sccm and N-2 flowrate varies from 80 to 110 sccm to investigate the influence of N-2 flux rates on the films' properties. Reflection high energy electron diffraction and X-ray diffraction results indicate that all deposits are highly c axis oriented, whereas the characteristics of photoluminescence spectra are strongly affected by the N-2 flowrates. GaN films prepared at 100 sccm has a smooth surface and exhibits the optimal illumination performance. This inexpensive GaN/ITO/glass structure has potential application in optoelectronic devices.