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论文类型： 期刊论文

发表时间： 2015-03-01

发表刊物： SOLID STATE COMMUNICATIONS

收录刊物： SCIE、EI

卷号： 205

页面范围： 28-32

ISSN号： 0038-1098

关键字： Semiconductor; Interfaces; Defect levels; Electronic band structure

摘要： A defect-free structural model of the amorphous SiO2/4H-SiC(0001) interface is presented through first-principle calculations. Following the potential lineup method, we first calculate the valence- and conduction-band offsets of this interface, which are in good agreement with the experimental values. Based on this interface model, we create several typical interface defects and estimate the accurate charge transition levels of these defects within the HSE06 hybrid functional scheme. The results indicate that the silicon interstitial in SiO2 and carbon dimers in both SiC and SiO2 are the possible candidates for the large interface states experimentally observed near the conduction band of 4H-SiC. (C) 2015 Elsevier Ltd. All rights reserved.