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论文类型： 期刊论文

发表时间： 2013-10-01

发表刊物： JOURNAL OF NUCLEAR MATERIALS

收录刊物： SCIE、EI

卷号： 441

期号： 1-3

页面范围： 54-58

ISSN号： 0022-3115

摘要： Using a non-destructive conductive atomic force microscope combined with the Ar+ etching technique, we demonstrate that nanoscale and conductive He bubbles are formed in the implanted layer of single-crystalline 6H-SiC irradiated with 100 keV He+. We find that the surface swelling of irradiated SiC samples is well correlated with the growth of elliptic He bubbles in the implanted layer. First-principle calculations are performed to estimate the internal pressure of the He bubble in the void of SiC. Analysis indicates that nanoscale He bubbles acting as a captor capture the He atoms diffusing along the implanted layer at an evaluated temperature and result in the surface swelling of irradiated SiC materials. (C) 2013 Elsevier B.V. All rights reserved.