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论文类型： 期刊论文

发表时间： 2013-01-01

发表刊物： NANO LETTERS

收录刊物： SCIE、EI、Scopus

卷号： 13

期号： 1

页面范围： 85-90

ISSN号： 1530-6984

关键字： Pseudobinary system; solid-solution nanowires; synthesis; lattice matching; structure homology

摘要： Pseudobinary solid-solution semiconductor nanowires made of (GaP)(1-x)(ZnS)(x), (ZnS)(1-x)(GaP)(x) and (GaN)(1-x)(ZnO)(x) were synthesized based on an elaborative compositional, structural, and synthetic designs. Using analytical high-resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS), we confirmed that the structure uniformity and a lattice match between the two constituting binary components play the key roles in the formation of quaternary solid-solution nanostructures. Electrical transport measurements on individual GaP and (GaP)(1-x)(ZnS)(x) nanowires indicated that a slight invasion of ZnS in the GaP host could lead to the abrupt resistance increase, resulting in the semiconductor-to-insulator transition. The method proposed here may be extended to the rational synthesis of many other multicomponent nanosystems with tunable and intriguing optoelectronic properties for specific applications.