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发布时间：2019-03-09

论文类型：期刊论文

发表时间：2010-05-15

发表刊物：PHYSICA B-CONDENSED MATTER

收录刊物：Scopus、EI、SCIE

卷号：405

期号：10

页面范围：2481-2484

ISSN号：0921-4526

关键字：Amorphous semiconductor; Coordination number; Density of states; Modification phenomenon

摘要：The model for amorphous semiconductor InSb (a-InSb) was constructed through the first principles calculations, based on the idea of "continuous random networks" (CRN). The results of structural parameters for a-InSb are in agreement with the available data both theoretically and experimentally. The structure of a-InSb is almost tetrahedrally bonded with a perfect average coordination number of four. Due to the influence of the disorders, the density of states for a-InSb has the smearing structure in contrast to crystalline InSb (c-InSb). As a consequence of the induction of disorders, modification phenomena occur at the band edge of a-InSb in contrast to that of c-InSb. (C) 2010 Elsevier B.V. All rights reserved.