NAME

朱慧超

Paper Publications

Influence of Ni and Au/Ni catalysts on GaN nanowire growth
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  • Indexed by:

    期刊论文

  • First Author:

    Zhao, Danna

  • Correspondence Author:

    Huang, H (reprint author), Dalian Univ Technol, Dept Elect Sci & Technol, Fac Elect Informat & Elect Engn, Dalian 116024, Peoples R China.

  • Co-author:

    Huang, Hui,Wu, Haibo,Ren, Mingkun,Zhu, Huichao,Liu, Yan,Sun, Baojuan

  • Date of Publication:

    2013-12-01

  • Journal:

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

  • Included Journals:

    SCIE、EI、Scopus

  • Document Type:

    J

  • Volume:

    210

  • Issue:

    12

  • Page Number:

    2689-2692

  • ISSN No.:

    1862-6300

  • Key Words:

    Au; Ni catalyst; GaN; nanowires; NH3; N-2 flow rate

  • Abstract:

    GaN nanowires (NWs) were grown on Ni- and Au/Ni-coated Si (100) substrate by chemical vapor deposition via reaction of metallic Ga and NH3. It was found that the Au/Ni layer tends to form liquid droplets with more uniform size distribution and regular spherical shape under annealing, which facilitates the growth of straight and long NWs. The effects of NH3/N-2 ratio on NW growth are different for Ni and Au/Ni catalysts, due to the competition between the vapor-solid (VS) and vapor-liquid-solid (VLS) growth. The XRD analyses indicate that with decreasing NH3 flow rate, [0001] axial growth becomes dominant with the formation of NiGa4 catalyst.

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