Release Time:2019-03-09  Hits:

Indexed by: Journal Article

Date of Publication: 2013-06-01

Journal: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Included Journals: Scopus、EI、SCIE

Volume: 210

Issue: 6

Page Number: 1217-1220

ISSN: 1862-6300

Key Words: doping; field effect transistors; mobility; nanowires; photoluminescence; ZnO

Abstract: In this work, we synthesized Cu-doped ZnO nanowires through a vapor-liquid-solid process. We investigated their composition and photoluminescence properties; and we found the Cu-doped ZnO nanowires have a c-axis preferential growth direction, uniform Cu distribution and a characteristic spectrum. We further investigated their electrical property by fabricating a simple field effect transistor based on an individual C-shaped Cu-doped ZnO nanowire. The electrical studies reveal that the Cu-doped ZnO nanowire has n-type conductivity and ultralow electron mobility.