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Indexed by:期刊论文

Date of Publication:2013-06-01

Journal:PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Included Journals:SCIE、EI、Scopus

Volume:210

Issue:6

Page Number:1217-1220

ISSN No.:1862-6300

Key Words:doping; field effect transistors; mobility; nanowires; photoluminescence; ZnO

Abstract:In this work, we synthesized Cu-doped ZnO nanowires through a vapor-liquid-solid process. We investigated their composition and photoluminescence properties; and we found the Cu-doped ZnO nanowires have a c-axis preferential growth direction, uniform Cu distribution and a characteristic spectrum. We further investigated their electrical property by fabricating a simple field effect transistor based on an individual C-shaped Cu-doped ZnO nanowire. The electrical studies reveal that the Cu-doped ZnO nanowire has n-type conductivity and ultralow electron mobility.