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发表时间： 2015-01-01

发表刊物： 人工晶体学报

期号： 12

页面范围： 3439-3443,3454

ISSN号： 1000-985X

摘要： A finite element model (FEM) was presented to calculate the GIDs of wafers. The model includes the effect of initial stress. The suitability of the inverting method was discussed for wafers after polishing and grinding by the model and experiments. The results show that the method is suitable for polished wafers. The difference between the GIDs obtained using the model and the inverting method is less than 1 μ m. The error is larger than 5% of the maximum GID value for the 300 mm diameter and 394 μm thickness wafer ground by #5000 diamond wheel. For the 200 mm diameter and 194 μm thickness wafer ground by #2000 diamond wheel bifurcation occurs as the residual stress is larger than the critical value. The method can not be used since the wafer flatness and the GID could not be superposed. © 2015, Chinese Ceramic Society. All right reserved.

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