张庆瑜

个人信息Personal Information

教授

博士生导师

硕士生导师

性别:男

毕业院校:复旦大学

学位:博士

所在单位:物理学院

学科:凝聚态物理

办公地点:大连理工大学三束材料改性重点实验室1号楼203房间

联系方式:qyzhang@dlut.edu.cn 0411-84707930 转 13

电子邮箱:qyzhang@dlut.edu.cn

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Defects in low nitrogen-doped highly oriented diamond film grown by microwave plasma-assisted chemical vapor deposition

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论文类型:期刊论文

发表时间:2008-01-01

发表刊物:SCRIPTA MATERIALIA

收录刊物:SCIE、EI

卷号:58

期号:2

页面范围:103-105

ISSN号:1359-6462

关键字:CVD; carbon; dislocation; transmission electron microscopy

摘要:A diamond film was deposited using a two-step process in which nitrogen is added during the second step. We compare the defects in {001} and {111} growth sectors from the two-steps: dislocation loops found in {001} growth sectors of the first step disappear in {001} growth sectors with N-doping, whereas the density of planar defects in {111} growth sectors strongly increases. It is suggested that N-doping stops vacancies from aggregating to form dislocation loops or vacancy clusters. (c) 2007 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.