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基于RHEED图像外延GaN基薄膜表面晶格演变分析

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Date of Publication:2022-10-10

Journal:安徽工业大学学报 自然科学版

Volume:24

Issue:1

Page Number:67-71

ISSN No.:1671-7872

Note:新增回溯数据

Pre One:基于ECR-PEMOCVD生长的稀磁半导体(Ga,Mn)N的特性

Next One:基于双热电偶校准ECR-PEMOCVD薄膜生长温度分析研究
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