Current position: Home >> Scientific Research >> Patents

一种SiC MOSFET器件低温稳定性的评价测试方法

Hits:

First Author:Dejun WANG

Disigner of the Invention:孙雨浓,杨超,Qin Fuwen

Authorization number:ZL 2018 1 1163919.7

Pre One:柔性透明聚酰亚胺衬底上的氮化铟镓基薄膜及其制备方法

Next One:柔性透明聚酰亚胺衬底上的氮化铟镓基薄膜及其制备方法