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一种降低SiO<sub>2</sub>/SiC界面态密度的方法

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First Author:Dejun WANG

Disigner of the Invention:李青洙,Qin Fuwen

Affilication of Author(s):电子信息与电气工程学部

Application Number:CN105304498A

Authorization number:CN201510671058.3

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