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Indexed by:期刊论文

Date of Publication:2012-12-01

Journal:JOURNAL OF ELECTRONIC MATERIALS

Included Journals:Scopus、SCIE、EI

Volume:41

Issue:12

Page Number:3447-3452

ISSN No.:0361-5235

Key Words:Cu alloys; thin film; electrical conductivity; silicide formation; cluster-plus-glue-atom model

Abstract:Cu-Ni-Mo alloys were investigated to increase thermal stability against silicide formation. The alloy compositions were chosen such that an insoluble element (Mo) solute was dissolved into Cu via a third element Ni which is soluble in both Cu and Ni. Thin-film Cu-Ni-Mo alloys were prepared by magnetron sputtering. The films with Mo/Ni ratio of 1/12 exhibited low electrical resistivities in combination with high thermal stabilities against silicide formation, in support of a tentative "cluster-plus-glue-atom" model for stable solid solutions. In particular, a (Mo1/13Ni12/13)(0.3)Cu-99.7 sample reached a minimum resistivity of 2.6 mu Omega cm after 400A degrees C/1 h annealing and remained highly conductive with resistivities below 3 mu Omega cm even after 400A degrees C/40 h annealing. These alloys are promising candidates for future interconnect materials.