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个人信息Personal Information
教授
博士生导师
硕士生导师
任职 : 国际磨粒技术学会（International Committee of Abrasive Technology, ICAT）委员，中国机械工程学会极端制造分会副主任、生产工程分会常务委员、微纳米制造技术分会常务委员，中国机械工程学会生产工程分会磨粒加工技术专业委员会副主任、切削加工专业委员会常委委员、精密工程与微纳技术专业委员会常委委员，中国机械工程学会特种加工分会超声加工技术委员会副主任，中国机械工程学会摩擦学分会微纳制造摩擦学专业委员会常务委员，中国机械工业金属切削刀具协会切削先进制造技术研究会常务理事、对外学术交流工作委员会副主任、切削先进制造技术研究会自动化加工技术与系统委员会副主任。
性别：男
毕业院校：西北工业大学
学位：博士
所在单位：机械工程学院
学科：机械制造及其自动化. 机械电子工程. 航空宇航制造工程
办公地点：机械工程学院5138
联系方式：0411-84706059
电子邮箱：kangrk@dlut.edu.cn
Two-Step Electrochemical Mechanical Polishing of Pure Copper
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论文类型：期刊论文
发表时间：2019-11-07
发表刊物：ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
收录刊物：EI、SCIE
卷号：8
期号：11
页面范围：P699-P703
ISSN号：2162-8769
摘要：It is difficult to achieve low roughness in a short time with high material removal rate (MRR) at low polishing pressure by conventional CMP of copper. To solve this problem, a two-step electrochemical mechanical polishing (ECMP) method consisting of rough polishing and fine polishing at polishing pressure less than 0.3 psi is proposed. Then potentiodynamic polarization, potentiostatic polarization and ECMP experiments were conducted to verify the feasibility of the combined process. The results of rough polishing show that MRR of more than 1 mu m.min(-1) can be reached with hydroxyethylidene diphosphonic acid (HEDP) based electrolyte. Besides, the roughness can be improved from Ra 610.4 nmto Ra 155.0 nm after 20 min rough polishing. The roughness can be further improved to Ra 4.7 nm after 60 min fine polishing with glycine-benzotriazole (BTA) based electrolyte. The results demonstrated that the two-step ECMP is effective to achieve low surface roughness within a short time. (c) 2019 The Electrochemical Society.