论文名称:Mechanism of the effect of electron beam melting on the distribution of oxygen, nitrogen and carbon in silicon 论文类型:期刊论文 发表刊物:INTERNATIONAL JOURNAL OF MATERIALS RESEARCH 收录刊物:SCIE、CPCI-S 卷号:110 期号:5 页面范围:476-480 ISSN号:1862-5282 关键字:Electron beam melting; Silicon; Carbon; Redistribution; SiC 摘要:Electron beam melting was utilized to investigate the behavior of carbon flow by melting 100 g of multi-crystalline silicon in an electron beam furnace for five minutes. Carbon and nitrogen are the constituent impurities in contaminated Si samples with an average weight of 13% and 9%, respectively. The electron beam melting experiment caused redistribution of the impurities along the periphery and bottom of the Si sample with a pie-shaped structure. Investigations through scanning electron microscopy and energy dispersive X-ray spectroscopy confirmed that the impurities were silicon nitride and silicon carbide. It was determined that Si3N4 has a rod-shaped microstructure, whereas SiC has a granular morphology. By segregating the impurities redistributed through this technique, pure Si was obtained in the remaining sample. 发表时间:2019-05-01