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Indexed by:期刊论文

Date of Publication:2013-04-01

Journal:JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS

Included Journals:SCIE、EI

Volume:22

Issue:4

ISSN No.:0218-1266

Key Words:Chemical-mechanical polishing (CMP); rule-based fill; DFM; ASIC

Abstract:Chemical-mechanical polishing (CMP) is an essential process in deep-submicrometer LSI manufacturing to achieve Chip's planarization. It includes two processes: back-end-of-line (BEOL) and front-end-of-line (FEOL). This paper focuses on the problem of BEOL in 65 nm copper process. Although model-based dummy metal fill has become a tendency recently, the proposed improved rule-based dummy fill is appropriate still. A middle scale design is used for simulation. The metal density, oxide thickness, copper thickness, capacitance variation and variation of layout data size were investigated. The results show that improved rule-based dummy fill and model-based dummy fill have the same planarization, and proposed method has small capacitance variation. The GDS file size of the proposed rule-based fill is less than the model-based fill's.