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Date of Publication:2017-01-01

Journal:功能材料

Volume:48

Issue:8

Page Number:203-207

ISSN No.:1001-9731

Abstract:In the study of hafnium oxide based new-type ferroelectric thin films devices, it is required to deposit TiN ultra-thin electrode films with high conductivity and low surface roughness at low temperature.In this work, TiN thin film were prepared by DC reactive magnetron sputtering on silicon substrates with the deposition temperature changed from room temperature to 350 ℃.The composition, crystalline structure, surface roughness, thickness and density of the films were characterized by XPS, XRD, AFM, and XRR methods.It was found that, by reducing the deposition time, TiN electrode thin films with the thickness less than 30 nm and high conductivity can be successfully fabricate at the relatively low deposition temperature of 350 ℃.

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