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论文类型：期刊论文

发表时间：2017-06-01

发表刊物：MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

收录刊物：SCIE、EI

卷号：63

页面范围：97-106

ISSN号：1369-8001

关键字：Silicon wafer; Chemo-mechanical grinding; Soft abrasive; Surface finish; Subsurface damage

摘要：A new soft abrasive grinding wheel (SAGW) used in chemo-mechanical grinding (CMG) was developed for machining silicon wafers. The wheel consisted of magnesia (MgO) soft abrasives, calcium carbonate (CaCO3) additives and magnesium oxychloride bond. Surface topography, roughness and subsurface damage of the silicon wafers ground using the new SAGW were comprehensively investigated. The results showed that the grinding with the new SAGW produced a surface roughness of about 0.5 nm in R-a and a subsurface damage layer of about 10 nm in thickness, which is comparable to that produced by chemo-mechanical polishing. This study also revealed that the chemical reactions between MgO abrasive, CaCO3 additives and silicon material did occur during grinding, thereby generating a soft reactant layer on the ground surface. The reactant layer was easily removed during the grinding process.