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论文类型：期刊论文

发表时间：2017-11-15

发表刊物：Materials Science in Semiconductor Processing

收录刊物：SCIE、EI、Scopus

卷号：71

期号：-

页面范围：321-325

关键字：Semiconductor; Gallium oxide; Nanoindentation; Deformation

摘要：The deformation of single crystal beta gallium oxide (beta-Ga2O3) under nanoindenting was investigated using transmission electron microscopy. The deformation pattern of beta-Ga2O3 was found to follow a certain route with the increased indentation load: (i) stacking faults along the (200) lattice planes and twinning structures with (2 01) plane as twin boundary, (ii) dislocations on (101) lattice planes and (iii) lattice bending and cracking. Such a deformation pattern is unique, significantly different from that of Si and other semiconductor materials.