高尚

个人信息Personal Information

教授

博士生导师

硕士生导师

性别:男

毕业院校:大连理工大学

学位:博士

所在单位:机械工程学院

学科:机械制造及其自动化

办公地点:机械工程学院高性能制造研究所#5015室

联系方式:手机:15104088992

电子邮箱:gaoshang@dlut.edu.cn

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Warping of silicon wafers subjected to back-grinding process

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论文类型:期刊论文

发表时间:2015-04-01

发表刊物:PRECISION ENGINEERING-JOURNAL OF THE INTERNATIONAL SOCIETIES FOR PRECISION ENGINEERING AND NANOTECHNOLOGY

收录刊物:SCIE、EI

卷号:40

页面范围:87-93

ISSN号:0141-6359

关键字:Silicon wafer; Grinding; Thinning; Warping; Stress

摘要:This study investigates warping of silicon wafers in ultra-precision grinding-based back-thinning process. By analyzing the interactions between the wafer and the vacuum chuck, together with the machining stress distributions in damage layer of ground wafer, the study establishes a mathematical model to describe wafer warping during the thinning process using the elasticity theory. The model correlates wafer warping with machining stresses, wafer final thickness, damage layer thickness, and the mechanical properties of the monocrystalline silicon. The maximum warp and the warp profile are measured on the wafers thinned to various thicknesses under different grinding conditions, and are used to verify the modeling results. (C) 2014 Elsevier Inc. All rights reserved.