赵书霞

个人信息Personal Information

副教授

硕士生导师

性别:女

毕业院校:大连理工大学

学位:博士

所在单位:物理学院

学科:等离子体物理

办公地点:新三束实验室3号楼 201室

联系方式:0411-84709795-21

电子邮箱:zhaonie@dlut.edu.cn

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Surface-charging effect of capacitively coupled plasmas driven by combined dc/rf sources

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论文类型:期刊论文

发表时间:2010-03-01

发表刊物:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

收录刊物:SCIE、EI

卷号:28

期号:2

页面范围:287-292

ISSN号:0734-2101

摘要:The surface charging effect in hybrid dc/rf capacitively coupled plasmas is investigated by particle-in-cell/Monte Carlo simulations with an equivalent-circuit module. When the thickness of the dielectric is fixed, the self-bias dc voltage induced by the charge accumulated in the dielectric first increases and then decreases with increased dc voltage. The ratio of electron-to-ion charge flowing into the dielectric increases from -1.195 to -2.582. Increasing the dc voltage results in the number of high-energy ions bombarding the dielectric decreasing. The average electron energy at the dielectric decreases to the minimum value at the biggest self-bias dc voltage in the beginning and then rapidly increases. While fixing the dc source with thickening the dielectric, the self-bias dc voltage rises, but the charge ratio decreases. The average electron energy decreases monotonically and the ion-energy distributions (IEDs) at the dielectric are shifted toward the higher energy region. The results imply that the applied dc voltage may increase the electron flux and average energy to the dielectric at the cost of reduced etching rate, which may mitigate the notching effect. The applied dc voltage can also serve as a tool to modulate the ion IEDs. At the same time, a thicker dielectric will require higher applied dc voltage. (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3305537]