Dejun WANG

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Professor   Supervisor of Doctorate Candidates   Supervisor of Master's Candidates  

Academic Honors : Participant of the Program for New Century Excellent Talents of Ministry of Education of China

Personal Profile

Prof. Dejun WANG received the B.S. and M.S. degree in semiconductors from Jilin University, Changchun, China; and the Ph.D. degree in materials science from Tsinghua University, Beijing, China. He has worked in Peking University, Nagoya University and Nara Institute of Science and Technology.
      Prof. Wang joined Dalian University of Technology (DUT) in 2004 as a professor in the field of microelectronics. His research interests are semiconductor defect physics, semiconductor SiC & GaN device physics and technology, Si3DP/GSIc technologies, sensor chip, and intelligent electronic safety control. The recent work mainly includes the physics and technology of SiO2/SiC interfaces, metal-SiC contacts, oxidation technology of SiC semiconductor, and the development of GaN power devices.

Research Field:
1. Semiconductor Defect Physics;
2. Semiconductor SiC & GaN Device Physics and Technology;
3. Si3DP/GSI Technologies;
4. Sensor Chip, Intelligent electronic safety control

eMail: dwang121@dlut.edu.cn

Publications
[10] 刘冰冰 等. Passivation of SiC surface. Applied Physics Letters, 104: 202101 (2014)
[09] 江..滢 等. Field isolation for GaN MOSFETs. Semicond. Sci. & Tech., 29: 055002 (2014)
[08] 王青鹏 等. Characterization of GaN MOSFETs. IEEE Trans. on Electron Devices, 61: 498 (2014)
[07] 朱巧智 等. Electrical and physical properties of 4H-SiC MOS interface. Physica B, 432: 89 (2014)
[06] 李文波 等. Oxidation of step edges on SiC surfaces. Applied Physics Letters, 103: 211603 (2013)
[05] 朱巧智 等. Passivation of SiO2/SiC interface traps. Applied Physics Letters, 103: 062105 (2013)
[04] 黄玲琴 等. Barrier of metal/SiC contacts. Applied Physics Letters, 103: 033520 (2013)
[03] 李文波 等. Insight into the Oxidation and defects of SiC. Physical Review B, 87: 085320 (2013)
[02] 黄玲琴 等. SiC Ohmic contacts. Applied Physics Letters, 100: 263503 (2012)
[01] 朱巧智 等. SiO2/SiC interface transition region. Applied Physics Letters, 99: 082102 (2011)

译著:《半导体材料与器件表征技术》,大连理工大学出版社,2008年6月
原著:《Semiconductor Material and Device Characterization》by Dieter K. Schroder

Education Background

Work Experience

Social Affiliations

Research FocusMore>>

  • 传感器与传感网;飞行器智能控制系统;
  • 半导体SiC、GaN、石墨烯材料与器件科学 Semiconductor Materials and Devices
  • 功率芯片、传感器芯片设计制造及应用 Power Semiconductor Devices