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论文类型：期刊论文

发表时间：2013-04-01

发表刊物：JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS

收录刊物：SCIE、EI

卷号：22

期号：4

ISSN号：0218-1266

关键字：Chemical-mechanical polishing (CMP); rule-based fill; DFM; ASIC

摘要：Chemical-mechanical polishing (CMP) is an essential process in deep-submicrometer LSI manufacturing to achieve Chip's planarization. It includes two processes: back-end-of-line (BEOL) and front-end-of-line (FEOL). This paper focuses on the problem of BEOL in 65 nm copper process. Although model-based dummy metal fill has become a tendency recently, the proposed improved rule-based dummy fill is appropriate still. A middle scale design is used for simulation. The metal density, oxide thickness, copper thickness, capacitance variation and variation of layout data size were investigated. The results show that improved rule-based dummy fill and model-based dummy fill have the same planarization, and proposed method has small capacitance variation. The GDS file size of the proposed rule-based fill is less than the model-based fill's.