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个人信息Personal Information
助理研究员
性别：女
出生日期：1990-07-04
学位：博士
所在单位：物理学院
办公地点：物理楼 431
联系方式：18842624369
电子邮箱：wmhkjt@dlut.edu.cn
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- 王敏焕, 边继明, Sun, Hongjun, 刘维峰, Zhang, Yuzhi, 骆英民.n-VO2/p-GaN based nitride-oxide heterostructure with various thickness of VO2 layer grown by MBE[J],APPLIED SURFACE SCIENCE,2022,389:199-204
- 王敏焕, Fan, Lele, 边继明, 张东, Liu, Hongzhu, Sun, Hongjun, 骆英民.Room-temperature metal-insulator transition of MBE grown VO2 film investigated by temperature dependent resistance and transmittance[J],JOURNAL OF MATERIALS SCIENCE MATERIALS IN ELECTRONICS,2022,28(15):11046-11052
- Sun, Hongjun, 张炳烨, 边继明, 王敏焕, 张东, Miao, Lihua, 骆英民.Stability and heating rate dependent metal-insulator transition properties of VO2 film grown by MBE[J],JOURNAL OF MATERIALS SCIENCE MATERIALS IN ELECTRONICS,2022,28(22):16861-16866
- 王敏焕, 边继明, Sun, Hongjun, Liu, Hongzhu, Li, Xiaoxuan, 骆英民, 黄火林, 张玉枝.Sunlight-induced resistance changes and their effects on the semiconductor-metal transition behavior of VO2 film[J],JOURNAL OF MATERIALS SCIENCE,2022,51(17):8233-8239
- 王敏焕, 冯昱霖, 边继明, 史彦涛.基于同一结构的钙钛矿太阳电池和钙钛矿LED研究[A],第四届新型太阳能电池学术研讨会,2022,1
- Zhang, Yadong, 张炳烨, 王敏焕, Feng, Yulin, 边继明.Growth and Characteristics of n-VO2/p-GaN based Heterojunctions[J],Journal of Wuhan University of Technology,2022,35(2):342-347
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