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发表时间：2014-01-01

发表刊物：功能材料

期号：16

页面范围：16111-16115

ISSN号：1001-9731

摘要：To meet the stringent demands of increasing capacitance density for various devices on microelectronic IC chips,it was necessary to develop new controllable techniques to deposit ultra-thin HfO2 high-k dielectric films with a thickness less than 10 nm.In this work,HfOCl2 ,HNO3 ,and H2 O2 were used as main raw mate-rials to prepare pure water-based solution precursor diluted with water.HfO2 films were produced via spin-coat-ing on silicon substrate cleaned with plasma.Film thickness,surface morphology and composition were investi-gated using X-ray reflectivity,AFM and XPS.The results show that this unique sol-gel approach enables con-venient preparation of smooth,dense,and stoichiometric HfO2 nano-films with a growth rate less than 1 nm/cycle.

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