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Indexed by:期刊论文

Date of Publication:2014-03-01

Journal:PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES

Included Journals:SCIE、EI、Scopus

Volume:57

Page Number:145-148

ISSN No.:1386-9477

Key Words:GaN; Nanowire; Ga; GaCl3

Abstract:High quality GaN nanowires (NWs) were grown on a Si (1 0 0) substrate by using Ga and GaCl3 sources, which were placed at two different zones in a quartz tube, respectively. It was found that the GaCl3 source contributes to the growth of long and straight NWs. The effect of GaCl3 source on NWs growth was discussed. Structure and morphology of the NWs were characterized by X-ray diffraction and scanning electron microscopy, respectively. (C) 2013 Elsevier B.V. All rights reserved.