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个人信息Personal Information
副教授
硕士生导师
性别：男
毕业院校：吉林大学
学位：博士
所在单位：控制科学与工程学院
学科：检测技术与自动化装置. 模式识别与智能系统. 导航、制导与控制
办公地点：海山楼A1117
联系方式：zhuhuichao@dlut.edu.cn
Growth of high quality GaN nanowires by using Ga/GaCl3 sources
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论文类型：期刊论文
发表时间：2014-03-01
发表刊物：PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
收录刊物：SCIE、EI、Scopus
卷号：57
页面范围：145-148
ISSN号：1386-9477
关键字：GaN; Nanowire; Ga; GaCl3
摘要：High quality GaN nanowires (NWs) were grown on a Si (1 0 0) substrate by using Ga and GaCl3 sources, which were placed at two different zones in a quartz tube, respectively. It was found that the GaCl3 source contributes to the growth of long and straight NWs. The effect of GaCl3 source on NWs growth was discussed. Structure and morphology of the NWs were characterized by X-ray diffraction and scanning electron microscopy, respectively. (C) 2013 Elsevier B.V. All rights reserved.