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论文类型：期刊论文

发表时间：2013-12-01

发表刊物：PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

收录刊物：SCIE、EI、Scopus

卷号：210

期号：12

页面范围：2689-2692

ISSN号：1862-6300

关键字：Au; Ni catalyst; GaN; nanowires; NH3; N-2 flow rate

摘要：GaN nanowires (NWs) were grown on Ni- and Au/Ni-coated Si (100) substrate by chemical vapor deposition via reaction of metallic Ga and NH3. It was found that the Au/Ni layer tends to form liquid droplets with more uniform size distribution and regular spherical shape under annealing, which facilitates the growth of straight and long NWs. The effects of NH3/N-2 ratio on NW growth are different for Ni and Au/Ni catalysts, due to the competition between the vapor-solid (VS) and vapor-liquid-solid (VLS) growth. The XRD analyses indicate that with decreasing NH3 flow rate, [0001] axial growth becomes dominant with the formation of NiGa4 catalyst.