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论文类型：期刊论文

发表时间：2013-06-01

发表刊物：PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

收录刊物：SCIE、EI、Scopus

卷号：210

期号：6

页面范围：1217-1220

ISSN号：1862-6300

关键字：doping; field effect transistors; mobility; nanowires; photoluminescence; ZnO

摘要：In this work, we synthesized Cu-doped ZnO nanowires through a vapor-liquid-solid process. We investigated their composition and photoluminescence properties; and we found the Cu-doped ZnO nanowires have a c-axis preferential growth direction, uniform Cu distribution and a characteristic spectrum. We further investigated their electrical property by fabricating a simple field effect transistor based on an individual C-shaped Cu-doped ZnO nanowire. The electrical studies reveal that the Cu-doped ZnO nanowire has n-type conductivity and ultralow electron mobility.