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论文类型：会议论文

发表时间：2009-10-25

收录刊物：EI、CPCI-S、Scopus

页面范围：1030-+

摘要：The dielectrostriction effect of thermal SiO2 was experimentally studied in this paper. A beam bending method was used to apply mechanical stresses on the dielectric and the dielectric constant was characterized by the capacitance of a sandwich structure. A model for extracting the dielectrostriction coefficient, M-12, was developed and special samples for the measurements were fabricated. According to the measurements the dielectrostriction coefficient, M-12, of thermal SiO2 is -0.19 +/- 0.01x10(-21)m(2)/V-2.