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Indexed by:期刊论文

Date of Publication:1994-03-01

Journal:1st International Workshop on Plasma-Based Ion Implantation

Included Journals:SCIE、CPCI-S

Volume:12

Issue:2

Page Number:905-909

ISSN No.:1071-1023

Abstract:Plasma source ion implantation is a process in which a target is immersed in a plasma and a series of large negative-voltage pulses are applied to it to extract ions from the plasma and implant them into the target. A Monte Carlo simulation model is developed to study the energy and angle distributions of ions striking the spherical target for high pressures of the neutral gas. The charge exchange and momentum transfer sections of ion-neutral that depend on the ion energy are taken into account precisely. The energy and angle distributions of A(r)+ at the spherical target during the sheath edge evolution for the different pressures are investigated in detail.