Release Time:2019-03-10  Hits:

Indexed by: Journal Article

Date of Publication: 1994-02-01

Journal: JOURNAL OF APPLIED PHYSICS

Included Journals: Scopus、SCIE

Volume: 75

Issue: 3

Page Number: 1335-1339

ISSN: 0021-8979

Abstract: Plasma source ion implantation is a process in which a target is immersed in a plasma and a series of large negative-voltage pulses is applied to it to extract ions from the plasma and implant them into the target. A Monte Carlo simulation model is developed to study the energy and angle distributions of ions striking the spherical target for high pressures of the neutral gas. The ion-neutral charge exchange and momentum-transfer cross sections that depend on the ion energy are taken into account precisely. The energy and angle distributions of Ar+ at the spherical target during the sheath edge evolution after the ion matrix sheath for different pressures are investigated in detail.