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Indexed by:期刊论文

Date of Publication:1994-02-01

Journal:JOURNAL OF APPLIED PHYSICS

Included Journals:SCIE、Scopus

Volume:75

Issue:3

Page Number:1335-1339

ISSN No.:0021-8979

Abstract:Plasma source ion implantation is a process in which a target is immersed in a plasma and a series of large negative-voltage pulses is applied to it to extract ions from the plasma and implant them into the target. A Monte Carlo simulation model is developed to study the energy and angle distributions of ions striking the spherical target for high pressures of the neutral gas. The ion-neutral charge exchange and momentum-transfer cross sections that depend on the ion energy are taken into account precisely. The energy and angle distributions of Ar+ at the spherical target during the sheath edge evolution after the ion matrix sheath for different pressures are investigated in detail.