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Indexed by:期刊论文

Date of Publication:2010-03-01

Journal:CHINESE PHYSICS B

Included Journals:SCIE、EI、ISTIC

Volume:19

Issue:3

ISSN No.:1674-1056

Key Words:plasma source ion implantation; ion sheath; two-dimensional particle-in-cell model; Ion dose

Abstract:A two-dimensional particle-in-cell simulation is used to study the time-dependent evolution of the sheath surrounding a prolate spheroid target during a high voltage pulse in plasma source ion implantation. Our study shows that the potential contour lines pack more closely in the plasma sheath near the vertex of the major axis, i.e. where a thinner sheath is formed, and a non-uniform total ion dose distribution is incident along the surface of the prolate spheroid target due to the focusing of ions by the potential structure. Ion focusing takes place not only at the vertex of the major axis, where dense potential contour lines exist, but also at the vertex of the minor axis, where sparse contour lines exist. This results in two peaks of the received ion dose, locating at the vertices of the major and minor axes of the prolate spheroid target, and an ion dose valley, staying always between the vertices, rather than at the vertex of the minor axis.