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预电离大气压低温等离子体射流发生器

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First Author:Chunsheng Ren

Disigner of the Invention:Wang Dezhen

Application Number:CN200910010111.X

Authorization Date:2009-01-13

Authorization number:CN101466194

Pre One:会切磁场约束ICP增强电离的非平衡磁控溅射薄膜沉积装置